Mask absorber material dependence of 2D OPC in 193nm high NA lithography

Konferenz: EMLC 2006 - 22nd European Mask and Lithography Conference
23.01.2006 - 26.01.2006 in Dresden, Germany

Tagungsband: EMLC 2006

Seiten: 2Sprache: EnglischTyp: PDF

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Cheng, Wen-Hao; Farnsworth, Jeff (Intel Corporation, 2200 Mission College Blvd., Santa Clara, California 95054 USA)

Rigorous optical polarization and proximity correction (OPC) for reticle induced polarization effects are critical to the success of 193nm wavelength immersion lithography implementation. The impact of 2D and 3D mask polarization effects to imaging in ultra high-NA low-k1 imaging is assessed by simulation. An end-to-end (ETE) dense line feature of attenuated phase shift mask (attPSM) with various material of film stack is studied.