Demonstration of High Output Power Density (50 W/cc) Converter using 600 V SJ-MOSFET and SiC-SBD
Konferenz: CIPS 2006 - 4th International Conference on Integrated Power Systems
07.06.2006 - 09.06.2006 in Naples, Italy
Tagungsband: CIPS 2006
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Tsukuda, Masanori; Omura, Ichiro; Saito, Wataru (Semiconductor Company, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan)
Domon, Tomokazu (Toshiba Business & Life Service Corp, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan)
Inhalt:
This paper reports on the possibility of a high output power density converter and, for that purpose, refers to a demonstration of a small-volume DC-DC down converter using a 600 V Superjunction MOSFET (SJ-MOSFET) and a silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the target for the year 2018.