High voltage monolithic P-MOS with integrated Start–up Structure

Konferenz: CIPS 2006 - 4th International Conference on Integrated Power Systems
07.06.2006 - 09.06.2006 in Naples, Italy

Tagungsband: CIPS 2006

Seiten: 6Sprache: EnglischTyp: PDF

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Selgi, Lorenzo M.; Arcuri, Luigi; Fragapane, Leonardo (STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy)

A new high voltage PMOS with a monolithic current/thermal sensor, and a start-up circuit has been developed to build a power integrated circuit to be co-packaged with a standard low voltage PWM controller. The integration of the start-up circuit, removing the high voltage from the controller chip and minimizing the high voltage external components, allow to obtain a high performance, low cost, hybrid solution for the next-generation off-line SMPS power IC converter. This device can be easily made by conventional high voltage PMOS fabrication process.