Analysis and Comparison of Low-Voltage MOSFET Devices with Planar and Trench-gate Layouts
Konferenz: CIPS 2006 - 4th International Conference on Integrated Power Systems
07.06.2006 - 09.06.2006 in Naples, Italy
Tagungsband: CIPS 2006
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Chimento, F.; Lazzaro, G.; Musumeci, S.; Raciti, A. (DIEES-ARIEL, University of Catania, Viale A. Doria, 6 - 95125-Catania, Italy)
The paper deals with the comparison of the on-state resistances of low-voltage power MOSFETs belonging to different technologies. The main structural characteristics of two families of MOSFETs (strip-based layout and trench-gate) are compared and discussed in order to understand the advantages, drawbacks, and the impact on converter applications. First of all the main aspects regarding the composition of the whole on-state resistance in both the types of devices are faced. An experimental evaluation of the on-state resistance in several devices belonging to the two families is carried out. Finally the figure of merit obtained as the product of the gate charge versus the on-state resistance of the devices is discussed in order to evaluate the impact on both the switching performances and the efficiency in the case of converter applications.