Bergogne, Dominique; Bevilacqua, Pascal; Planson, Dominique; Morel, Hervé (CEGELY, CNRS UMR 5005, Lyon, France)
Two sample SiC JFET are characterized and used to build a high operating temperature converter. Power losses are evaluated, the effect of temperature on ONState resistance and saturation current is measured and discussed. Temperature effects on dynamic behaviour is not a major issue. Total losses vary with temperature. A 600V/300V converter is build and tested. JFET and inductor are cooled at 300deg C.