The Status Quo and Future Trend of High Voltage Power Devices
Konferenz: VDE-Kongress 2006 - Innovations for Europe - Fachtagungsberichte der ITG/BMBF - GMM - ETG - GMA - DGBMT
23.10.2006 - 25.10.2006 in Aachen, Germany
Tagungsband: VDE-Kongress 2006
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Majumdar, Gourab (Mitsubishi Electric Corporation, Japan)
The state-of-the-art power devices have been reviewed in the beginning of this paper along with a brief overview of the related history, starting from their bipolar-based origin to the present day IGBT Modules and Intelligent Power Modules (IPMs). In the following part, an analysis of the changing requirements from the high power application fields and a projection of future growth for high voltage power semiconductors to comply with such needs have been made including details of the progresses made for realizing advanced IGBT modules of voltage rating ranging up to 6500V. The paper will also highlight on the status and future possibilities of silicon carbide based power semiconductors for far future power conversion applications.