Aerial Imaging Performance of ALTA4700 Printed Mask for 130nm Design Rule

Konferenz: EMLC 2007 - 23rd European Mask and Lithography Conference
22.01.2007 - 26.01.2007 in Grenoble, France

Tagungsband: EMLC 2007

Seiten: 10Sprache: EnglischTyp: PDF

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Hsu, Jyh Wei; Wu, Chun Hung; Cheng, Kevin (Taiwan Mask Corporation, Science-Based Industrial Park, Hsinchu 300, Taiwan)

Photomask plays a key role in optical lithography. Laser pattern generators are widely used for photomask manufacturing due to their high throughput. However, corner rounding and line-end shortening degrade pattern fidelity resulting in distorted pattern image s on wafer. ALTA4700 incorporates a new 0.9 NA, 42X reduction lens that significantly improves resolution and pattern accuracy performance. In this study, three critical line/space 130nm technology device patterns are printed by ALTA4700 laser pattern generator. Input data for these layers was based on existing OPC model generated for e-beam pattern generator. ALTA4700 printed masks have the same aerial image performance compare with e-beam pattern generator.