Hydrogenated water application for particle removal on EUV mask blank substrates
Konferenz: EMLC 2007 - 23rd European Mask and Lithography Conference
22.01.2007 - 26.01.2007 in Grenoble, France
Tagungsband: EMLC 2007
Seiten: 3Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Eichenlaub, Sean; Rastegar, Abbas (Mask Blank Development Center-SEMATECH, 255 Fuller road, Albany, NY 12203 USA)
Dress, Peter; Xu, Fei (HamaTech, Ferd.-von-Steinbeis Ring 10, 75447 Sternenfels Germany)
Marmillion, Pat (3IBM assignee in SEMATECH, 2706 Montopolis drive Austin, TX 78741 USA)
Inhalt:
The capability of hydrogenated water to clean EUV blank substrates was examined. The hydrogenated water cleaning process was compared with an H2O2/NH4OH/H2O mixture (SC1) and ozonated water cleaning processes. A small amount of ammonia added to the hydrogenated water improved its particle removal efficiency. The concentration of hydrogen and the method used to dispense the water had little effect. The use of ozonated and hydrogenated water together gave high particle removal efficiencies, which were similar to those obtained using SC1. Additionally, the use of ozonated water with hydrogenated water further reduced the amount of ammonia required to achieve high particle removal efficiencies. With further process optimization, hydrogenated and ozonated water has the potential to replace SC1 in cleaning EUV substrates.