Quantitative Measurement of EUV Resist Outgassing
Konferenz: EMLC 2007 - 23rd European Mask and Lithography Conference
22.01.2007 - 26.01.2007 in Grenoble, France
Tagungsband: EMLC 2007
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Denbeaux, Greg; Garg, Rashi; Waterman, Justin; Mbanaso, Chimaobi; Netten, Jeroen; Brainard, Robert; Fan, Yu-Jen; Yankulin, Leonid; Antohe, Alin; DeMarco, Kevin; Jaffe, Molly; Waldron, Matthew (College of Nanoscale Science and Engineering, University at Albany, Albany, NY USA 12203)
Dean, Kim (SEMATECH, 2706 Montopolis Drive, Austin, TX USA 78741)
Inhalt:
The Mo/Si multilayer mirrors used for extreme ultraviolet (EUV) lithography can become contaminated during exposure in the presence of some hydrocarbons. Because this leads to a loss in the reflectivity of the optics and throughput of the exposure tools, it needs to be avoided. Since photoresists are known to outgas during exposure to EUV radiation in a vacuum environment, the careful choice of materials is important to preserving the EUV optics. Work therefore has been performed to measure the species and quantities of molecules that outgas from EUV resists when exposed to EUV radiation.