Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 µm

Konferenz: ECOC 2007 - 33rd European Conference and Exhibition of Optical Communication
16.09.2007- 20.09.2007 in Berlin, Germany

Tagungsband: ECOC 2007

Seiten: 2Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Cong, D.-Y.; Martinez, A.; Merghem, K.; Ramdane, A. (CNRS Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis, FRANCE)
Provost, J.-G. (Alcatel-Thales 3-5 Lab, Route de Nozay, 91460 Marcoussis, FRANCE)
Fischer, M. (Nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, 97218 Gerbrunn, GERMANY)
Krestnikov, I.; Kovsh, A. (Innolume GmbH, Konrad-Adenauer-Allee 11,44263 Dortmund, GERMANY)

The temperature dependence of Henry factor aH of undoped and p-type doped InAs/GaAs QD lasers is reported for the 20-80 °C range. It is shown that aH of p-type doped devices is temperature insensitive.