Extremely high reliability of guardring-free InAlAs avalanche photodiode
Konferenz: ECOC 2007 - 33rd European Conference and Exhibition of Optical Communication
16.09.2007- 20.09.2007 in Berlin, Germany
Tagungsband: ECOC 2007
Seiten: 2Sprache: EnglischTyp: PDF
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Autoren:
Ishimura, E.; Nakaji, M.; Ihara, S.; Aoyagi, T.; Ishikawa, T. (High Frequency & Optical Device Works)
Yagyu, E.; Yoshiara, K.; Tokuda, Y. (Advanced Technology R & D Center, Mitsubishi Electric Corporation)
Inhalt:
The InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top surface exhibits a record high reliability of over 8000 hours at a high temperature of 200 oC.