Semi-Insulating Buried Heterostructure 1.55micrometer InGaAlAs Electroabsorption Modulated Laser with 60GHz Bandwidth

Konferenz: ECOC 2007 - 33rd European Conference and Exhibition of Optical Communication - Post-Deadline Papers
16.09.2007- 20.09.2007 in Berlin, Germany

Tagungsband: ECOC 2007

Seiten: 2Sprache: EnglischTyp: PDF

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Jany, Ch.; Kazmierski, Ch.; Decobert, J.; Alexandre, F.; Blache, F.; Drisse, O.; Carpentier, D.; Lagay, N.; Martin, F.; Derouin, E. (Alcatel Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France)
Johansen, T.; Jiang, Ch. (Technical University of Denmark, Oersted-DTU, 2800 Kgs. Lyngby, Denmark)

We demonstrate an integrated laser-modulator based on AlGaInAs Single Active Layer and Semi-Insulating iron-doped InP burying technology. Components with very short 50micrometer EAM section show up to 60GHz bandwidth together with Static Extinction Ratio of 18dB for the first time.