CMP of a Ru based layer in an advanced Cu low-k stack

Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany

Tagungsband: ICPT 2007

Seiten: 5Sprache: EnglischTyp: PDF

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Vaes, Jan; Sinapi, Fabrice; Hernández, José Luis (Imec, Kapeldreef 75, B-3001 Heverlee, Belgium)
Santoro, Gaetano; Nguyen, Olivier (Applied Materials, Kapeldreef 75, B-3001 Heverlee, Belgium)
Wang, James (Applied Materials, 974E Arques Avenue, Sunnyvale, CA94086)

Ruthenium based layers are promising candidates as novel barrier and seed alloys for future technology nodes. This contribution presents CMP results on such a layer, provided by Applied Materials, integrated in an advanced copper low-k stack patterned with a metal hard mask based process. Results on the effect of barrier and metal hard mask polishing with different slurries on the final planarity and on the electrical properties of Cu structures are presented. Some limiting factors from a CMP point of view with respect to feature size and pattern density have been identified.