Post-CMP Cleaning: Interaction between Particles and Surfaces

Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany

Tagungsband: ICPT 2007

Seiten: 6Sprache: EnglischTyp: PDF

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Park, J.-G.; Kim, T.-G. (Department of Materials Engineering, Hanyang University, Ansan, 426-791, South Korea)

Defects due to CMP processes should be removed for next processing step. The ζ potential of slurry particle and substrate has been considered to be a critical factor in terms of particle adhesion and removal. The fundamental research such as the calculation of interaction force based on DLVO theory and the measurement of adhesion forces by AFM between slurry particle and wafer surfaces can enhance the understanding of cleaning mechanism and development of cleaning process. This paper gives an overview of post CMP cleaning process from fundamentals to the current and future.