Next Generation Chemical Mechanical Planarization Slurries for Polishing Silicon on Advanced Devices
Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany
Tagungsband: ICPT 2007
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
White, Michael L.; Nam, Chul Woo; Batllo, Francois; Walters, Alicia (Cabot Microelectronics Corp. Aurora, IL)
Inhalt:
The development of advanced slurries to meet the rigorous requirements for silicon polishing is discussed. A silicon slurry was developed for planarizing silicon substrates. The mechanism of polishing was studied by polishing kinetics, ζ potential, FTIR and particle size measurements. In addition, a selective slurry which can be tuned to give high to moderate oxide removal and moderate silicon polishing rates has been developed.