Development of Post Ru CMP Cleaning Solutions
Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany
Tagungsband: ICPT 2007
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Kim, In-Kwon; Cho, Byung-Gwun; Kim, Tae-Gon; Park, Jin-Goo (Department of Materials Engineering and Bio-nano Technology, Hanyang University, Ansan 426-791, Korea)
Inhalt:
Ru (ruthenium) has been suggested as an electrode in DRAM and a Cu diffusion barrier metal for Cu interconnection. To planarize deposited Ru layer, chemical mechanical planarization (CMP) was suggested. However, abrasive particles can be easily contaminated on the Ru surface after polishing. In this study, ζ potentials of abrasive particle were measured as a function of pH. The etch rate and oxidation behavior of Ru were observed as a function of concentration of various acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in different cleaning solutions. Ζ potentials of abrasive particle decreased as a function of pH in these chemicals. Ru layer was etched and oxidized in a selected chemical. The highest particle removal efficiency was observed in a solution with citric acid at pH 9.