CMP issues arising from novel materials and concepts in the BEOL of advanced Microelectronic Devices

Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany

Tagungsband: ICPT 2007

Seiten: 6Sprache: EnglischTyp: PDF

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Gottfried, Knut; Schubert, Ina; Gessner, Thomas (Fraunhofer-Institute for Reliability and Micro-Integration, Reichenhainer Str. 88, 09126 Chemnitz, Germany)
Schulze, Knut; Schulz, Stefan; Gessner, Thomas (TU Chemnitz, Centre for Microtechnologies, Reichenhainer Str. 70, 09126 Chemnitz, Germany)

The feasibility of CMP for interconnect-schemes based on different low-k approaches was investigated. Low-k stacks based on porous MSQ material capped with different dielectric barriers could pass conventional CMP processes without any significant damage. Low-k stacks based on porous SiO2-Aerogel could not meet the stability requirements at present. Airgap architectures were found to be very less sensitive regarding CMP and exhibit an excellent mechanical stability.