New Polish Chemistry and Process for Improved Fixed Abrasive CMP Performance

Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany

Tagungsband: ICPT 2007

Seiten: 6Sprache: EnglischTyp: PDF

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Menk, G.; Marks, R.; Leung, G.; Iyer, A.; Diao, J.; Zhou, Y.; Lee, C. (Applied Materials, Inc., Sunnyvale, CA 94085, USA)

Fixed abrasive chemical mechanical planarization (CMP) has demonstrated excellent polish planarity with low dishing for direct-polish shallow trench isolation (STI) applications. However, the standard process exhibits a removal fast band near the wafer periphery that degrades polish performance. A new polish chemistry has been developed that dramatically increases the oxide removal rate for a given polish pressure, enabling the use of lower pressure processes. Low pressure polishing improves nitride polish performance and provides a larger CMP process window than is achievable using the baseline process.