High Resolution Patterning and Simulation on Mo/Si Multilayer for EUV Masks

Konferenz: EMLC 2008 - 24th European Mask and Lithography Conference
21.01.2008 - 24.01.2008 in Dresden, Germany

Tagungsband: EMLC 2008

Seiten: 7Sprache: EnglischTyp: PDF

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Tsikrikas, N.; Patsis, G. P.; Raptis, I. (Institute of Microelectronics, NCSR 'Demokritos', 15310 Athens, Greece)
Gerardino, A. (Istituto di Fotonica e Nanotecnologie (IFN), CNR, 00156 Roma, Italy)

Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool which performs e-beam writing simulation, resist development simulation and automated metrology has been developed and applied in the case of Mo/Si multilayer substrates. Simulation results are compared with experimental ones in order to evaluate the simulation’s accuracy.