Salfelder, Felix; Hedrich, Lars (Electronic Design Methodology, Department of Computer Science, University of Frankfurt a. M., Germany)
To date the only model for the NBTI and PBTI effects that support continuously variable stress input values is based on molecular processes involving diffusing hydrogen. This model and its abstractions are either too imprecise or computationally inapplicable for long time analyses. We present a different approach to BTI models for analogue circuits on transistor level. Our model is based on and backwards compatible with a proven digital-only model, which uses loading and unloading capacitors. We have developed a mechanism that allows error controlled and efficient simulation of transients for transistor circuits over long time scales. This mechanism, based on a predictor-corrector method, exploits the structure of our new BTI model.