A Physically Based Scalable SPICE Model for High-Voltage Super-Junction MOSFETs
Konferenz: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
20.05.2014 - 22.05.2014 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2014
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Victory, James; Neyer, Thomas; Yazdi, Mehrdad Baghaie (Fairchild Semiconductor, Germany)
Son, Dongkook; Lee, Kwangwon (Fairchild Semiconductor, Korea)
Zhou, Edward; Wang, Jason (Fairchild Semiconductor, China)
Inhalt:
This paper proposes a novel physical scalable SPICE model for Super Junction MOSFETs. The model is based on technology process and layout parameters, enabling a direct link between SPICE and process development. One model covers all device sizes and process perturbations. Designers have the ability to optimize a device in a given technology for achieving optimum performance over device size. Further, designers can use the model to predict new technology performance through variation and optimization of the process parameters.