Advantages of Temperature-stable Ron of SiC DioMOS in Practical Applications
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24.06.2015 - 26.06.2015 in Shanghai, China
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Seiten: 7Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Nakata, Hideki; Sawada, Kazuyuki; Watanabe, Keisuke; Usui, Ryosuke; Ueda, Tetsuzo; Fujii, Eiji (Panasonic Corporation, Japan)
This paper describes a feature of a SiC DioMOS which has low on-state resistance at elevated temperature. The DioMOS is the SiC MOSFET which also works as an antiparallel diode by utilizing an n-type epitaxial channel under the MOS gate for the reverse conduction path. The device structure of the DioMOS, temperature dependence of both the on-state resistance and forward voltage of the antiparallel diode are described. A conduction loss analysis and test results clarify the benefit of the DioMOS which has lower on-state resistance at elevated temperature. Parallel connection can be operated without thermal runaways as a result of device temperature by thermal photograph.