Drive and Protection of SiC Power Module
Konferenz: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.06.2015 - 26.06.2015 in Shanghai, China
Tagungsband: PCIM Asia 2015
Seiten: 7Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Ma, Xiankui; Zhang, Xing (Hefei University of Technology-Mitsubishi Electric Power Device Joint Laboratory, China)
Li, Jianfei (Wuxi Sineng New Energy Co., Ltd., China)
SiC power device has much good performance on power loss and high speed switching, which could realize the energy saving and compact system designing. This paper will explain the good performance of SiC MOSFET modules. The SiC MOSFET module integrated protection circuit will also be discussed. Moreover, with the built-in functions, SiC IPM could bring more benefits to the customers, including lower power loss, high-frequency application and high-power density designs.