New Hybrid Large DIPIPM(exp TM) for PV Application with built-in SiC-SBD and seventh-generation CSTBT(exp TM)

Konferenz: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.06.2015 - 26.06.2015 in Shanghai, China

Tagungsband: PCIM Asia 2015

Seiten: 6Sprache: EnglischTyp: PDF

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Wang, Yazhe; Yamaguchi, Kosuke; Tanaka, Tomofumi; Watabe, Kiyoto (Power Device Works, Mitsubishi Electric Corporation, Japan)

A new transfer mold type hybrid Silicon Carbide (SiC) large DIPIPM(exp TM) developed for photovoltaic (PV) power generating application is presented in this paper. The new DIPIPM(exp TM) is designed with built-in SiC Schottky Barrier Diode (SBD) and seventh-generation CSTBT(exp TM) chip that helped to achieve about 25% power loss reduction compare with Mitsubishi Electric’s existing PV DIPIPM(exp TM).