An Accurate Thermal Resistance Testing Method for Power Semiconductors
Konferenz: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.06.2015 - 26.06.2015 in Shanghai, China
Tagungsband: PCIM Asia 2015
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Zhang, Jin; Qiu, Zhijie; Wen, Xuhui (Institute of Electrical Engineering, Chinese Academy of Sciences, China)
Zhang, Jin; Qiu, Zhijie; Wen, Xuhui (Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, China)
Zhang, Jin; Qiu, Zhijie; Wen, Xuhui (Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, China)
Inhalt:
In this paper, the effect of temperature nonlinearities of the packaging materials on the thermal resistance measurement was analyzed by FEM tools. Based on the simulation results, a novel thermal resistance testing method for power semiconductors was proposed to improve the accuracy compared to the published JESD51-14 standard. Experimental results verified the effectiveness of the proposed method.