A Comparison of Switching Characteristics between SiC BJT and Si IGBT at Junction Temperature above 200ºC

Konferenz: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.06.2015 - 26.06.2015 in Shanghai, China

Tagungsband: PCIM Asia 2015

Seiten: 8Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Zhu, Hui; Sweet, Mark R.; Narayanan, E. M. Sankara (The University of Sheffield, UK)

Switching characteristics of a Silicon Carbide Bipolar Junction Transistor (SiC BJT) under varying junction temperatures up to 240ºC under high power rating (600V/18A) are presented. A short circuit current path is created to heat up the device under test (DUT). The switching power loss is measured under different junction temperatures. The total on/off loss is found to be almost constant across the whole junction temperature range. For comparison purposes, the switching test for Si IGBT is implemented with a maximum junction temperature of 165ºC. The experimental results clearly demonstrate the advantages of SiC BJTs for high frequency and high temperature power applications.