A Comparison of Switching Characteristics between SiC BJT and Si IGBT at Junction Temperature above 200ºC

Inhalt:
Switching characteristics of a Silicon Carbide Bipolar Junction Transistor (SiC BJT) under varying junction temperatures up to 240ºC under high power rating (600V/18A) are presented. A short circuit current path is created to heat up the device under test (DUT). The switching power loss is measured under different junction temperatures. The total on/off loss is found to be almost constant across the whole junction temperature range. For comparison purposes, the switching test for Si IGBT is implemented with a maximum junction temperature of 165ºC. The experimental results clearly demonstrate the advantages of SiC BJTs for high frequency and high temperature power applications.