Application Benefits Achieved Utilizing IGBT5-Based Power Semiconductors

Konferenz: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.06.2015 - 26.06.2015 in Shanghai, China

Tagungsband: PCIM Asia 2015

Seiten: 7Sprache: EnglischTyp: PDF

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Schulz, Martin; Nagarajan, Raghavan; Brieke, Dirk (Infineon Technologies, Warstein, Germany)
Zhao, Zhen Bo (Infineon Technologies, Shanghai, China)

This paper deals with the thermal aspects that arise from using the next generation of high power semiconductors featuring a maximum operating temperature for the 5th generation IGBT of 175ºC. The benefits that arise for the application and the points that need to be considered beyond the semiconductors are evaluated using a hardware demonstrator.