New Generation of Clustered IGBT with High Ruggedness
Konferenz: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.06.2015 - 26.06.2015 in Shanghai, China
Tagungsband: PCIM Asia 2015
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Long, Hong Yao; Sweet, Mark R. (University of Sheffield, UK)
Souza, M. M. De; Narayanan, E. M. S. (University of Sheffield, ECO Semiconductor, UK)
Inhalt:
In this paper, the characteristics of the next generation of 1200V Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) is fabricated and showing competitive performance to current IGBT technologies by providing the best trade-off between energy losses and ruggedness for industrial power applications. The techniques applied to this novel power device are high density of MOS cells in a ladder design with fine pattern process. The device can achieve 50% lower saturation current density and 10mus short circuit withstanding time at high temperature.