Robustness of level shifter gate driver ICs concerning negative voltages
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Song, Jinsheng; Frank, Wolfgang (Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany)
Inhalt:
In power electronic field, the level shifter gate driver IC suffers heavily from the negative voltage especially at the high side reference pin, which is normally connected with the load. Three half bridge level shifter gate driver ICs are tested under static and transient negative voltage condition. This paper will show the test method and point out the performance of each gate driver IC under the negative voltage condition.