Control Method for a Reverse Conducting IGBT
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Domes, Daniel (Infineon Technology AG, Max-Planck-Str. 5, 58581 Warstein, Germany)
Inhalt:
Combining IGBT and diode functionality into one piece of silicon, a reverse conducting IGBT (RC-IGBT) is created. This measure allows equipping a standard IGBT/diode-module with only one piece of chip by replacing IGBT and diode with the new RC-IGBT. The result is an enhanced current carrying capability without increasing the foot print of the module. As a result of the integration, the diode´s electrical performance can be influenced by the control state of the IGBT gate. In order to control the RC-IGBT system in a loss optimized manner, special control aspects need to be considered.