Progress of GaN Transistors for Automotive Applications

Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2015

Seiten: 8Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Autoren:
Wu, Y.-F.; Smith, K. (Transphorm Inc., 75 Castilian Drive, Goleta, CA 93117, USA)

Inhalt:
Continuous progress has been made since the success in JEDEC qualification of 600V-rated GaN-on-Si devices in 2013. Systematic voltage-accelerated off-state stress tests and temperature-accelerated on-state stress tests reveal an intrinsic Mean Time to Failure (MTTF) 8x107 and 3x107 hours at the rated voltage and rated temperature respectively. Application evaluation with the GaN-based bridge topology in hard-switched operation shows superior benefit over Si-based power devices in multiple dimensions including circuit simplicity, enhanced conversion efficiencies and much higher operation frequencies. Analysis as a front end for an EV on-board charger configurable to bi-direction power flow show >99% device efficiency at 100 kHz even at an ambient cooling fluid temperature of 105 °C. These advances indicate near term readiness for GaN in automotive applications starting from auxiliary power to finally the main drive.