The Cross Switch “XS” Silicon and Silicon Carbide Hybrid Concept

Inhalt:
A parallel arrangement of a Silicon (Si) IGBT and a Silicon Carbide (SiC) MOSFET is experimentally demonstrated. The concept referred to as the Cross Switch “XS” hybrid aims to reach optimum power device performance by providing low static and dynamic losses while improving the overall electrical and thermal properties due to the combination of both the bipolar Si IGBT and unipolar SiC MOSFET characteristics. For the purpose of demonstrating the XS hybrid, the parallel configuration was implemented experimentally in a single package for devices rated at 1200V. Test results were obtained to validate this approach with respect to the static and dynamic performance when compared to a full Si IGBT and a full SiC MOSFET reference devices having the same power ratings as for the XS hybrid samples. Furthermore, an advanced Bimode Cross Switch Hybrid (BXS) is also demonstrated for 3300V devices by combining a Si RC-IGBT or BIGT with SiC MOSFETs. The BXS provides both Switch and diode mode of operation without a separate freewheeling diode.