Constraints replacing IGBTs with SiC MOSEFTs in an onboard railway power supply
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Maerz, Andreas; Horff, Roman; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Center of Energy Technology, Universitätsstr. 30, 95447 Bayreuth, Germany)
Helsper, Martin; Rueger, Niklas (Siemens AG, Vogelweiherstr. 1-15, 90441 Nuremberg, Germany)
Inhalt:
In this paper a comparison between two different types of semiconductors for the use in an on-board power supply is being made with regard to losses, switching characteristics and DC-link design. Standard silicon IGBT´s are compared to SiC MOSFET´s in the same housing on the basis of equal voltage overshoots under hard switching conditions. The characteristics of both devices result in different limitations for the converter design.