Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Wang, Zhan; Honea, Jim; Wu, Yifeng (Transphorm Inc., USA)
Inhalt:
In this paper, a three-level Neutral Point Clamped (NPC) single phase inverter using GaN HEMT devices is discussed. A simple low cost three-level boot-strap driver circuit is applied. Using non-isolated power for the driver avoids interference between the drive and control circuits due to the very high dv/dt switching speed of GaN. Finally, a 2 kVA 100 kHz threelevel inverter using 600 V GaN HEMTs is designed and tested for validation.