Evaluation of GaN, SiC and Superjunction in 1 MHz LLC converter

Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2015

Seiten: 6Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Autoren:
Zhou, Haihua; Liu, Wenduo; Persson, Eric (Infineon Technologies, USA)

Inhalt:
With increasing demand of low profile and high efficiency power conversion, MHz LLC converter is adopted for its soft switching capability in full power range. Recent progress on Wide Band Gap (WBG) devices further enabled LLC converter in higher switching frequency range. In this paper, design guideline for primary side switch is provided. Device and system level evaluation of Gallium Nitride (GaN), Silicon Carbide (SiC) and superjunction as primary side switch in MHz LLC converter are presented. Evaluation includes driver scheme design and switching performance.