Advantages of High Power Fast Thyristors and Diodes Produced by Means of Low Temperature Sintering of Silver Paste
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Titushkin, Dmitriy; Pisarev, Alexander; Suma, Alexey (JSC Proton-Electrotex, RUS)
Krebs, Thomas (Heraeus Materials Technology GmbH & Co. KG, Hanau, Germany)
Inhalt:
The new possibilities to improve dynamic characteristics of power thyristors and diodes are discussed on the basis of low temperature silicon chip connection and Mo-disc by means of sintering of silver paste. It is described that for fast thyristors with silicon chip diameter 56-100 mm sintering technology allows decreasing greatly turn-off time simultaneously with decrease of on-state voltage. Complex application of sinter technology and proton irradiation allows also producing single chip freewheeling diodes with exclusive soft reverse recovery characteristic.