Theoretical Loss Analysis of Power Converters with 1200 V Class Si-IGBT and SiC-MOSFET

Inhalt:
Power converter efficiencies of 1200-V class Si-IGBT/SiC-SBD hybrid pairs and a SiC-MOSFET/ SiC-SBD pair were theoretically compared at a switching frequency above the limit of human hearing (20 kHz). Si-IGBT losses were simulated by TCAD. SiC device losses were calculated by analytical minimum loss models. Calculated efficiencies of the full-SiC pair were slightly higher than that of the hybrid pairs at conventional current densities less than 200 A/cm2. At a higher current density of 400 A/cm2, the hybrid pairs have a potential of high performance which is comparable with the full-SiC efficiency.