High Efficient Super Junction MOSFET Intelligent Power Module
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Ishimatsu, Yuji; Ando, Motohiro; Hase, Nobuhiro; Ino, Kazuhide (ROHM Co., Ltd., Japan)
Inhalt:
We have introduced a high-efficiency MOSFET-IPM (Intelligent Power Module) ideal for home appliances and small industrial equipment. The IPM comprises of gate drive ICs (HVIC and LVIC), bootstrap diodes for high side gate drive and MOSFETs to obtain 3-phase inverter topology. All of the components are highly integrated in a ROHM originated dual inline package with high thermal conductivity. Thanks to ROHM’s new generation “PrestoMOSTM” featuring ultra-fast body diode and low on-state resistance and gate drive ICs with circuits for preventing self turn-on circuit, the MOSFET-IPM successfully reduced the power losses by approximately 43% at the output condition of 2Arms, compared with our conventional IGBT-IPM.