Comparing Switching Performance of Gallium Nitride HEMT and Silicon Power MOSFET
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Lautner, Jennifer; Piepenbreier, Bernhard (University of Erlangen-Nuremberg, Germany)
Inhalt:
Gallium nitride (GaN) power devices promise better performance and efficiency compared to silicon (Si) transistors. However, due to the higher switching speed, parasitic elements have a larger impact on the switching transients and therefore characterization is more challenging. This paper presents a detailed comparison of the switching behavior of commercially available GaN and Si power devices rated at 100 V. A double pulse tester (DPT) with clamped inductive load was built for each device and layout design, hardware setup and measurement issues are proposed. Based on experimental data switching performance and losses are analyzed.