High Density and High Power Single-Stage LED Driver with 1200V Silicon Carbide MOSFET

Inhalt:
This paper proposes a 220 W single-stage dimmable LED driver topology with high power density using a 1200 V, 280mOmega Cree Silicon Carbide (SiC) MOSFET. The advantages of SiC MOSFETs enable this LED driver to operate at very high switching frequencies from 130 kHz to 500 kHz. By utilizing boundary/critical conduction mode combined with valley switching, this SiC based LED driver achieves above 93.5% efficiency while simultaneously reducing the total driver volume by 40% compared to a conventional 220 W two-stage LED driver. The paper will describe the LED driver’s circuit and show key switching waveforms, efficiency curves, thermal images, EMI scans, and a mechanical drawing of this proposed LED driver.