Analysis of SiC-MOSFETs utilised in Hard Switching Inverter Topologies with Switching Frequencies up to 1 MHz

Inhalt:
Due to their low specific on-resistance and low intrinsic capacitances silicon carbide power MOSFETs enable a significant increase of switching frequencies in power electronic applications in a voltage range of Vdc = 600 V, in which IGBTs are predominantly used. The objective of this analysis is to evaluate the potential of SiC-MOSFETs to increase the switching frequency in such applications. The suitability for high frequency power applications is analysed by exemplarily determining the individual maximum switching frequencies of four SiC-MOSFETs in a hard switching inverter half-bridge at Vdc = 600 V and an effective output current of Iload = 10 A.