Latest 1,700V SiC MOSFET vs. Advanced Silicon Technology in Auxiliary Power Supply
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Scrimizzi, Filippo; Abbatelli, Luigi; Macauda, Michele; Catalisano, Giuseppe (STMicroelectronics, Stradale Primosole, 50, 95121, Catania, Italy)
Inhalt:
Wide band-gap semiconductors (WBG) have recently drawn a lot of interest as main switches for power conversion processes. Among these, breakthrough technology as the SiC MOSFET is one that has aroused much interest for high voltage applications. ST has already released in production his own 1,200V SiC MOSFET technology for which the main value proposition vs. the silicon technology (IGBTs) has been fully analyzed in many topologies related to solar inverter (PFC, DC/DC Boost, DC/AC bridge topologies). In this paper we’ll show a step forward since we have developed a dedicated 1,700V SiC MOSFET voltage range family for specific topologies dedicated to Auxiliary Power Supplies. A detailed analysis has been carried out, by comparing the SiC 1700V performances with the ST state-of-the-art-silicon high voltage MDmesh K5 series in order to understand the relative advantages and doing a correct application positioning.