Comparison of drivers for SiC-BJTs, Si-IGBTs and SiC-MOSFETs

Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2015

Seiten: 9Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Autoren:
Frankeser, Sophia; Muhsen, Hani; Lutz, Josef (Chair of Power Electronics and EMC, Technische Universität Chemnitz, Germany)

Inhalt:
The driving requirements for SiC BJTs, SiC MOSFETs and Si IGBTs will be analyzed in this paper. The switching characteristics of the SiC devices and the Si IGBT will be presented using different driver concepts. Total losses of a power electronics system and its applicability will be evaluated.