Analysis of the Switching Behaviour of 650 V GaN Semiconductors and Design of a Two-Step Gate Voltage Driver
Konferenz: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
19.05.2015 - 20.05.2015 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2015
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Brueske, Stephan; Fuchs, Friedrich W. (Institute for Power Electronics, Christian-Albrechts-University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany)
Inhalt:
In this paper, the switching behaviour of Gallium Nitride (GaN) Gate Injection Transistors (GIT) is analysed. The influence of the gate resistor and an additional gate capacity on the switching performance is investigated. Additionally, a two-step gate voltage is applied to the GIT and the impact on the switching performance is analysed and compared with the standard gate driver solution.