Ultra-low (1.25mΩ) On-Resistance 900V SiC 62mm Half- Bridge Power Modules Using New 10mΩ SiC MOSFETs

Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2016

Seiten: 8Sprache: EnglischTyp: PDF

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Autoren:
Casady, Jeffrey; Pala, Vipindas; Brunt, Edward Van; Hull, Brett; Ryu, Sei-Hyung; Wang, Gang-Yao; Richmond, Jim; Allen, Scott T.; Grider, Dave; Palmour, John W.; Killeen, Peter; McPherson, Brice; Olejniczak, Kraig; Passmore, Brandon; Simco, David (Wolfspeed, a Cree Company, 3028 E. Cornwallis Road, RTP, NC 27709, USA)

Inhalt:
For the first time, a new 900V, 10mOmega SiC MOSFET chip is fabricated, tested, and assembled in a >400A, ½ bridge power module, with only 1.25-2.5mOmega on-resistance at 25deg C, depending on the number of chips per switch position (i.e., eight or four, respectively). The SiC MOSFET chip had a measured breakdown > 1kV, and a specific RDS(ON) of 2.3mOmega•cm2. The chips were then assembled in 16 power modules, and characterized up to 175deg C. Only a 40- 50% increase in RDS(ON) was measured with a temperature increase from 25deg C to 150deg C. With no knee voltage, conduction losses relative to comparably rated Si IGBT power modules can be reduced up to 70%.