Evolution of SiC products for industrial application

Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2016

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Kizu, Naoyuki; Nate, Satoru; Miura, Mineo; Kawamoto, Noriaki; Ino, Kazuhide (ROHM Co.,Ltd., Japan)
Nakanishi, Masaharu (ROHM semiconductor Gmbh, Germany)
Hase, Nobuhiro (ROHM semiconductor U.S.A., LLC, USA)

Inhalt:
Since commercial manufacture of Silicon Carbide (SiC) started in 2010, we have been extensively expanding its product line-ups. This paper covers recently released, new SiC products and technical updates which reflect the demands of industrial applications. First, our newly released 1700V SiCMOSFETs driven by SiC-optimized flyback control Integrated Circuits (ICs) for auxiliary power supplies show an outstanding performance compared to conventional Si-based solutions. Second, we have continuously added new products to our SiC-SBD and SiC-MOSFET product line-ups. As with the existing line-ups, our new products also exhibit excellent reliability in high temperature and high humidity environments – which are desirable characteristics for industrial applications. Finally, our new generation SiC-SBD is reported, which has both best-in-class low forward voltage and improved current surge robustness compared to its predecessor.