Benchmarking of SiC JFET and SiC MOSFET modules for the application in medium power traction converters
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Maerz, Andreas; Horff, Roman; Bertelshofer, Teresa; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Center of Energy Technology, Universitätsstr. 30, 95447 Bayreuth, Germany)
Helsper, Martin (Siemens AG, Vogelweiherstr. 1-15, 90441 Nuremberg, Germany)
Inhalt:
In this paper the behaviour of a SiC JFET power module is being analysed and the impact of its bodydiode behaviour on the performance of the SiC JFET is compared to a SiC MOSFET and a state of the art IGBT. Second it will be discussed how a low inductance DC-Link affect the dynamic losses of the JFET and whether the SiC JFET can benefit from a low inductance setup.