High Frequency, High Temperature designed DC/DC Coreless Converter for GaN Gate Drivers
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 7Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Wanderoild, Yohan; Bergogne, Dominique (Université Grenoble Alpes, 38000 Grenoble, France; CEA, LETI, Minatec Campus 38054 Grenoble, France)
Razik, Hubert (Université Claude Bernard Lyon 1, AMPERE UMR CNRS 5005, Villeurbanne, France Campus, 38054 Grenoble, France)
Inhalt:
This paper presents a functional prototype of a 200mW DC/DC converter to be used for a GaN transistor gate driver. The structure of the converter is presented. It is based on a resonant coreless transformer especially designed and tuned to operate at a frequency close to 6 MHz.