New Transfer Mold DIPIPM(exp TM) utilizing silicon carbide (SiC) MOSFET
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Wang, Yazhe; Watabe, Kiyoto; Sakai, Shinji; Tanioka, Toshikazu (Mitsubishi Electric Corporation, Power Device Works. 1-1-1 Imajukuhigashi Nishi-Ku Fukuoka City 819-0192, Japan)
Inhalt:
A new transfer mold type full Silicon Carbide (SiC) super-mini DIPIPM(exp TM)developed for small capacity motor drive system in both home appliances and industrial applications that higher energy-saving efficiency is needed is presented in this paper. The new DIPIPM(exp TM) is designed to compatible with current super-mini series DIPIPM(exp TM) product package outline, while employing the Silicon Carbide (SiC) MOSFET power chip inside to help realize the power loss reduction and the miniaturization of the inverter drive system. SiC-MOSFET is expected to replace silicon IGBT because its on-state voltage at low current density and switching characteristics are superior to those of silicon IGBT. By applying the Silicon Carbide (SiC) power MOSFET chip technology, the power loss was reduced about 76% compared with conventional silicon type super-mini DIPIPM(exp TM) products.