3300V HiPak2 modules with Enhanced Trench (TSPT+) IGBTs and Field Charge Extraction Diodes rated up to 1800A
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Corvasce, Chiara; Andenna, Maxi; Matthias, Sven; Storasta, Liutauras; Kopta, Arnost; Rahimo, Munaf; De-Michielis, Luca; Geissmann, Silvan; Schnell, Raffael (ABB Switzerland Ltd. Semiconductors, Fabrikstr. 3, 5600 Lenzburg, Switzerland)
Inhalt:
In this paper, we introduce the new generation 3300V HiPak2 IGBT module (130x190) mm employing the recently developed TSPT+ IGBT with Enhanced Trench MOS technology and Field Charge Extraction (FCE) diode. The new chip-set enables IGBT modules with improved electrical performance in terms of low losses, good controllability, high robustness and soft diode recovery. Due to the lower losses and the excellent SOA, the current rating of the 3300V HiPak2 module can be increased from 1500A for the current SPT+ generation to 1800A for the new TSPT+ version.